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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1075 DESCRIPTION With TO-126 package High collector-peak current Low collector saturation voltage APPLICATIONS For audio frequency output amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage IN Collector-emitter voltage Emitter-base voltage ANG CH EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -50 -40 -5 -2 -4 UNIT V V V A A W ae ae Collector current (DC) Collector current-Peak Total power dissipation Junction temperature Storage temperature Ta=25ae 1.2 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-2mA ;IB=0 IC=-1mA ;IE=0 IC=-3.0A; IB=-0.3A*2 IC=-2.0A ;IB=-0.2A*2 VCB=-50V; IE=0 VCE=-10V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V*2 IC=-0.5A ; VCE=-5V*2 50 MIN -40 -50 2SB1075 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO ICEO IEBO hFE fT COB TYP. MAX UNIT V V -1.0 -1.5 -1 -100 -10 220 |I |I |I V V A A A Transition frequency Collector output capacitance Note: *2 pulse test hFE Classifications P 50-100 Q 80-160 HAN INC R SEM GE IE=0; f=1MHz ; VCB=-20V OND IC TOR UC 150 40 MHz pF 120-220 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1075 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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